Semiconductor Surface State Engineering for THz Nanodevices
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Publisher
IntechOpen
Link
http://www.intechopen.com/download/pdf/67347
Reference41 articles.
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3. Zhao H, Yang L, Zou H, Ma X, Hao Y. Enhancement of negative differential mobility effect in recessed barrier layer AlGaN/GaN HEMT for terahertz applications. IEEE Transactions on Electron Devices. 2019;66(3):1236-1242. DOI: 10.1109/TED.2019.2893640
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