Infrared absorption peak due to Ta=O bonds in Ta2O5 thin films
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1290494
Reference20 articles.
1. Some Dielectric Properties of Tantalum Pentoxide
2. Structural systematics in the binary system Ta2O5–WO3. V. The structure of the low-temperature form of tantalum oxide L-Ta2O5
3. Electronic structure of oxygen vacancy in Ta2O5
4. Intermixing at the tantalum oxide/silicon interface in gate dielectric structures
5. Formation of silicon–oxide layers at the interface between tantalum oxide and silicon substrate
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