Thermal atomic layer etching of crystalline GaN using sequential exposures of XeF2 and BCl3
Author:
Affiliation:
1. Department of Chemistry, University of Colorado, Boulder, Colorado 80309, USA
2. U.S. Naval Research Laboratory (NRL), Washington, D.C. 20375, USA
Funder
Semiconductor Research Corporation
Office of Naval Research
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/am-pdf/10.1063/1.5095938
Reference37 articles.
1. Overview of atomic layer etching in the semiconductor industry
2. Atomic Layer Etching of Al2O3 Using Sequential, Self-Limiting Thermal Reactions with Sn(acac)2 and Hydrogen Fluoride
3. Atomic Layer Etching of Si(100) and Si(111) Using Cl[sub 2] and Ar Neutral Beam
4. Atomic Layer Controlled Digital Etching of Silicon
5. Fluorocarbon assisted atomic layer etching of SiO2 using cyclic Ar/C4F8 plasma
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