Effects of thickness on the electrical properties of metalorganic chemical vapor deposited Pb(Zr, Ti)O3 (25–100 nm) thin films on LaNiO3 buffered Si
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1383262
Reference21 articles.
1. Ferroelectric Memories
2. Ferroelectric Field Effect Transistor Based on Epitaxial Perovskite Heterostructures
3. Apparent thickness effect on properties of ferroelectric PZT thin layers
4. Ferroelectric properties and fatigue of PbZr0.51Ti0.49O3thin films of varying thickness: Blocking layer model
5. Mechanisms of polarization switching in ferroelectric thin films
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