Ferroelectric properties and fatigue of PbZr0.51Ti0.49O3thin films of varying thickness: Blocking layer model
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.357589
Reference19 articles.
1. Ferroelectrics and high permittivity dielectrics for memory applications
2. Electrical characteristics of paraelectric lead lanthanum zirconium titanate thin films for dynamic random access memory applications
3. Ferroelectric Film Synthesis, Past and Present: A Select Review
4. Processing and electrical properties of Pb (ZrxTi1−x)O3(x=0.2–0.75) films: Comparison of metallo‐organic decomposition and sol‐gel processes
5. Ferroelectric PbZrxTi1-xO3 Thin Films Grown by Organometallic Chemical Vapor Deposition
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