Infrared ellipsometry of GaAs epilayers on Si(100)
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1561577
Reference18 articles.
1. Monolithic integration of GaAs/AlGaAs LED and Si driver circuit
2. Monolithic process for co-integration of GaAs MESFET and silicon CMOS devices and circuits
3. Monolithic integration of AlGaAs/GaAs MQW laser diode and GaAs MESFET grown on Si using selective regrowth
4. Improvement of the crystallinity of GaAs epitaxial layers grown on Si substrates assisted by electron beam irradiation
5. Mechanical stress in gallium‐arsenide on silicon substrates
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Optical phonons via oblique-incidence infrared spectroscopy and their deformation potentials in In1−xGaxAs;Journal of Applied Physics;2007-06
2. Analysis of Organic Films and Interfacial Layers by Infrared Spectroscopic Ellipsometry;Applied Spectroscopy;2005-11
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