Mechanical stress in gallium‐arsenide on silicon substrates
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.357664
Reference5 articles.
1. Dislocation Generation of III-V Semiconductors by the Biaxial Stress in GaAs/SiO2, InP/SiO2and III-V/Si Structure
2. Defect reduction by thermal annealing of GaAs layers grown by molecular beam epitaxy on Si substrates
3. Dislocation generation of GaAs on Si in the cooling stage
4. Dislocation reduction by impurity diffusion in epitaxial GaAs grown on Si
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Infrared ellipsometry of GaAs epilayers on Si(100);Applied Physics Letters;2003-03-17
2. Analysis of GaAs properties under biaxial tensile stress;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;1998-07
3. Stresses and strains in lattice‐mismatched stripes, quantum wires, quantum dots, and substrates in Si technology;Journal of Applied Physics;1996-06
4. Stresses and strains in epilayers, stripes and quantum structures of III - V compound semiconductors;Semiconductor Science and Technology;1996-05-01
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