Implementation of full-area-deposited electron-selective TiOx layers into silicon solar cells
Author:
Affiliation:
1. Institute for Solar Energy Research Hamelin (ISFH), Am Ohrberg 1, 31860 Emmerthal, Germany
2. Leibniz Universität Hannover, Institute of Solid-State Physics, Appelstr. 2, 30167 Hannover, Germany
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5061924
Reference9 articles.
1. Surface passivation of crystalline silicon solar cells: Present and future
2. J. Jhaveri, S. Avasthi, K. Nagamatsu, and J. C. Sturm, Proceedings of the 40th IEEE Photovolt. Spec. Conf. (Denver, 2014), pp. 1525-1528.
3. Industrially feasible, dopant‐free, carrier‐selective contacts for high‐efficiency silicon solar cells
4. Investigation of atomic-layer-deposited TiOx as selective electron and hole contacts to crystalline silicon
5. Effective passivation of crystalline silicon surfaces by ultrathin atomic-layer-deposited TiOx layers
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3. Dramatic Reduction of Silicon Surface Recombination by ALD TiOx Capping Layer from TiCl4 and H2O: The Role of Chlorine;ACS Applied Materials & Interfaces;2023-09-21
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