Effective passivation of crystalline silicon surfaces by ultrathin atomic-layer-deposited TiOx layers-Reference-Cited by-同舟云学术

Effective passivation of crystalline silicon surfaces by ultrathin atomic-layer-deposited TiOx layers

Published:2017-09 Issue: Volume:124 Page:441-447
ISSN:1876-6102
Container-title:Energy Procedia
language:en
Short-container-title:Energy Procedia

Author:

Titova Valeriya,Veith-Wolf Boris,Startsev Dimitrij,Schmidt Jan

Publisher

Elsevier BV

Reference18 articles.

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3. Metz A, Hezel R. Recorded efficiency above 21% for MIS-contacted diffused junction silicon solar cells. In: Proceeding of the 26th IEEE Photovoltaics Specialist Conference 1997; p. 283-6.

4. Passivation of aluminium- n+ silicon contacts for solar cells by ultrathin Al2O3 and SiO2 dielectric layers;Bullock;Phys. Status Solidi RRL,2013

5. Contact passivation in silicon solar cells using atomic-layer-deposited aluminium oxide layers;Zielke;Phys. Status Solidi RRL,2011

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