Contact passivation in silicon solar cells using atomic-layer-deposited aluminum oxide layers
Author:
Publisher
Wiley
Subject
Condensed Matter Physics,General Materials Science
Link
http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssr.201105285/fullpdf
Reference13 articles.
1. Very low surface recombination velocities on p-type silicon wafers passivated with a dielectric with fixed negative charge
2. Ultralow surface recombination of c-Si substrates passivated by plasma-assisted atomic layer deposited Al2O3
3. On the c-Si surface passivation mechanism by the negative-charge-dielectric Al2O3
4. Influence of the Deposition Temperature on the c-Si Surface Passivation by Al[sub 2]O[sub 3] Films Synthesized by ALD and PECVD
5. Excellent silicon surface passivation with 5 Å thin ALD Al2 O3 layers: Influence of different thermal post-deposition treatments
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