Recombination centers in Czochralski‐grownp‐Si
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.354461
Reference10 articles.
1. Energy dependence of deep level introduction in electron irradiated GaAs
2. Determination of the free energy level of deep centers, with application to GaAs
3. Hole-capture cross section ofDXcenters inGa1−xAlxAs
4. Switching Time in Junction Diodes and Junction Transistors
5. Properties of Silicon and Germanium: II
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