Current transients in almost-ideal Czochralski silicon p–n junction diodes
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.125345
Reference10 articles.
1. Very long current transients in reverse-biased almost ideal n/sup +/-p junctions
2. Transient component of leakage current in siliconpnjunctions
3. Photocurrent transients in almost ideal siliconp‐njunctions
4. A simplified and improved model of ideal and almost ideal silicon p‐n junctions: The role of oxygen
5. Spectrometry of very long‐current transients in almost ideal siliconp‐njunctions
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Improved extraction of the activation energy of the leakage current in silicon p–n junction diodes;Applied Physics Letters;2001-04-02
2. Diode Analysis of High-Energy Boron Implantation-Induced P-Well Defects;Journal of The Electrochemical Society;2001
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