Calculated potential profile near charged threading dislocations at metal/semiconductor interfaces
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1516272
Reference15 articles.
1. Theory of Threading Edge and Screw Dislocations in GaN
2. Deep acceptors trapped at threading-edge dislocations in GaN
3. The effect of doping and growth stoichiometry on the core structure of a threading edge dislocation in GaN
4. Charge accumulation at a threading edge dislocation in gallium nitride
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1. Effect of Threading Dislocations on Local Contacts in Epitaxial ZnO Films;Journal of The Electrochemical Society;2010
2. Influence of dislocations in the GaN layer on the electrical properties of an AlGaN/GaN heterostructure;Chinese Physics B;2009-11
3. Influence of the threading dislocations on the electrical properties in epitaxial ZnO thin films;Journal of Crystal Growth;2006-12
4. Imaging of thickness and compositional fluctuations in InGaN∕GaN quantum wells by scanning capacitance microscopy;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2005
5. Hot electron spectroscopy and microscopy;Reports on Progress in Physics;2004-08-27
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