Interface roughness scattering in type II broken-gap GaInAsSb/InAs single heterostructures
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2817813
Reference16 articles.
1. Electronic transport properties of a two-dimensional electron gas in a silicon quantum-well structure at low temperature
2. Interface roughness scattering in GaAs/AlAs quantum wells
3. Deep-level transient spectroscopy study of narrow SiGe quantum wells with high Ge content
4. Interface roughness scattering in InAs/AlSb quantum wells
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