Variable-temperature luminescence studies of InAsSb-based LED heterostructures emitting beyond 5 μm

Abstract

Abstract Variable-temperature (4.2 - 300 K) electroluminescence (EL) studies were performed on two asymmetrical InAs/InAsSb/InAsSbP LED heterostructures emitting at 5.02 and 5.10 μm wavelengths at 300 K (with an InSb content in the active layer of 0.15 and 0.16, respectively). For the structure with the narrowest bandgap, a weak temperature dependence of the position of the EL peak was observed. Along with strong carrier localization in the active layer, which was provided by the design of the structure, this made the studied heterostructures promising for fabrication of LEDs with working wavelengths extending beyond 5 μm at 300 K.