Temperature dependence of the optical and electrical properties of long-wavelength InAsSb-based LED heterostructures

Abstract

Abstract Optical and electrical characteristics of asymmetrical InAs/InAsSb/InAsSbP LED heterostructures with the InSb content in the active layer of 0.15 and 0.16 were studied in the temperature range 4.2 -300 K. At T < 150 K, radiative transitions involving donor-acceptor states in the InAs substrate were observed in electroluminescence spectra, and the presence of these states also showed up in the peculiarities of current-voltage characteristics. A strong effect of the quality of the InAsSb/InAsSbP heterointerface on the characteristics of the heterostructures was observed.