Carbon incorporation pathways and lattice sites in Si1−yCy alloys grown on Si(001) by molecular-beam epitaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1465122
Reference42 articles.
1. Near-Band-Edge Photoluminescence from PseudomorphicSi1−yCy/SiQuantum Well Structures
2. Effects of carbon on boron diffusion in SiGe: Principles and impact on bipolar devices
3. Electrical properties of Si1−xCx alloys and modulation doped Si/Si1−xCx/Si structures
4. Growth of an inverse tetragonal distorted SiGe layer on Si(001) by adding small amounts of carbon
5. Solubility of Carbon in Silicon and Germanium
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1. Solid-phase crystallization of Si1−x−ySnxCyternary alloy layers and characterization of their crystalline and optical properties;Japanese Journal of Applied Physics;2016-11-30
2. Chemical vapor deposition of Si:C and Si:C:P films—Evaluation of material quality as a function of C content, carrier gas and doping;Journal of Crystal Growth;2015-09
3. Growth of Si1−x−ySnxCyternary alloy layer on Si(001) substrate and characterization of its crystalline properties;Japanese Journal of Applied Physics;2015-07-21
4. Carbon re-incorporation in phosphorus-doped Si1−yCy epitaxial layers during thermal annealing;Journal of Alloys and Compounds;2013-03
5. The effect of structural and chemical bonding changes on the optical properties of Si/Si1−xCx core/shell nanowires;Journal of Materials Chemistry C;2013
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