Effects of carbon on boron diffusion in SiGe: Principles and impact on bipolar devices-Reference-Cited by-同舟云学术

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Effects of carbon on boron diffusion in SiGe: Principles and impact on bipolar devices

Published:1998-05 Issue:3 Volume:16 Page:1750
ISSN:0734-211X
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
language:
Short-container-title:J. Vac. Sci. Technol. B

Author:

Osten H. J.

Publisher

American Vacuum Society

Subject

General Engineering

Cited by 33 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The Effects of Carbon Doping on the Single-Event Transient Response of SiGe HBTs;IEEE Transactions on Nuclear Science;2023-08

2. Ab initio study of the effect of hydrogen passivation on boron-oxygen-carbon related defect complexes in silicon;Materials Science in Semiconductor Processing;2020-05

3. Enhanced Electrical Activation in In-Implanted Si0.35Ge0.65 by C Co-Doping;Materials Research Letters;2016-04-21

4. Effects of Carbon Pre-Germanidation Implantation on the Thermal Stability of NiGe and Dopant Segregation on Both n- and p-Type Ge Substrate;ECS Journal of Solid State Science and Technology;2015

5. Formation of SiGe Heterostructures and Their Properties;Springer Handbook of Crystal Growth;2010

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