Spatial resolution of ballistic electron emission microscopy measured on metal/quantum-well Schottky contacts
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2120899
Reference18 articles.
1. Direct investigation of subsurface interface electronic structure by ballistic-electron-emission microscopy
2. Observation of Interface Band Structure by Ballistic-Electron-Emission Microscopy
3. BEEM imaging and spectroscopy of buried structures in semiconductors
4. Ballistic Electron Emission Microscopy for Nonepitaxial Metal/Semiconductor Interfaces
5. Nanometer-resolved spatial variations in the Schottky barrier height of a Au/n-type GaAs diode
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3. Direct Measurements of Lateral Variations of Schottky Barrier Height Across “End-On” Metal Contacts to Vertical Si Nanowires by Ballistic Electron Emission Microscopy;Nano Letters;2012-01-11
4. Effect of diode size and series resistance on barrier height and ideality factor in nearly ideal Au/n type-GaAs micro Schottky contact diodes;Chinese Physics B;2010-10
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