Ballistic Transport at the Nanometric Inhomogeneities in Au/Nb:SrTiO3Resistive Switches-Reference-Cited by-同舟云学术

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Ballistic Transport at the Nanometric Inhomogeneities in Au/Nb:SrTiO3Resistive Switches

Published:2014-03-10 Issue:3 Volume:1 Page:1300057
ISSN:2196-7350
Container-title:Advanced Materials Interfaces
language:en
Short-container-title:Adv. Mater. Interfaces

Author:

Gerbi Andrea¹,Buzio Renato¹,Gadaleta Alessandro¹²,Anghinolfi Luca³,Caminale Michael¹²,Bellingeri Emilio¹,Siri Antonio Sergio¹²,Marré Daniele¹²

Affiliation:

1. CNR-SPIN National Research Council-Institute for Superconductivity; Innovative Materials and Devices; C.so Perrone 24 16152 Genova Italy

2. Physics Department; University of Genova; Via Dodecaneso 33 16146 Genova Italy

3. Paul Scherrer Institut; 5232 Villigen Switzerland

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials

Reference50 articles.

1. Schottky diode characteristics of electrodeposited Au∕n-Si(111) nanocontacts

2. Schottky-barrier formation at nanoscale metal-oxide interfaces

3. Spatial resolution of ballistic electron emission microscopy measured on metal/quantum-well Schottky contacts

4. Formation and Rupture of Schottky Nanocontacts on ZnO Nanocolumns

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1. Resistive switching suppression in metal/Nb:SrTiO₃ Schottky contacts prepared by room-temperature pulsed laser deposition;Journal of Physics D: Applied Physics;2024-07-05

2. Phase-space ab-initio direct and reverse ballistic-electron emission spectroscopy: Schottky barriers determination for Au/Ge(100);Applied Surface Science;2023-01

3. Improved barrier homogeneity in Pt/Al_0.75Ga_0.25N Schottky barrier diodes by graphene interlayer;Journal of Physics D: Applied Physics;2022-05-12

4. Interfacial resistive switching of Ruddlesden–Popper phase strontium titanate thin film by charge-modulated Schottky barrier;FlatChem;2021-05

5. Nondestructive Visualization of Interfacial Conducting Inhomogeneities in Memristive Oxides by Electroluminescence;Advanced Materials Interfaces;2020-11-30

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