Observation of lateral band-bending in the edge vicinity of atomically-thin Bi insulating film formed on Si(111) surface-Reference-Cited by-同舟云学术

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Observation of lateral band-bending in the edge vicinity of atomically-thin Bi insulating film formed on Si(111) surface

Published:2016-02 Issue: Volume:644 Page:41-45
ISSN:0039-6028
Container-title:Surface Science
language:en
Short-container-title:Surface Science

Author:

Nagaoka Katsumi,Uchihashi Takashi,Nakayama Tomonobu

Funder

Grant-in Aid for Young Scientists

Grant-in-Aid for Scientific Research

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Reference32 articles.

1. The electronic structure at the atomic scale of ultrathin gate oxides

2. A sound barrier for silicon?

3. Integrated nanoelectronics for the future

4. On tunneling in metal‐oxide‐silicon structures

5. Quantum-mechanical modeling of electron tunneling current from the inversion layer of ultra-thin-oxide nMOSFET's

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Structural and Physical Properties of Ultrathin Bismuth Films;Uspehi Fiziki Metallov;2021-12

2. Bias dependence and defect analysis of Bi on Si(111) 3×3β -phase;Physical Review B;2021-02-02

3. Bismuth–indium two-dimensional compounds on Si(111) surface;Surface Science;2016-09

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