Rapid thermal annealing of shallow Sb‐implanted Si
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.341478
Reference17 articles.
1. Device-grade ultra-shallow junctions fabricated with antimony
2. The optimization of a rutherford backscattering geometry for enhanced depth resolution
3. Limits to solid solubility in ion implanted silicon
4. Substitutional solid solubility limits during solid phase epitaxy of ion implanted (100) silicon
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Regrowth rates and dopant activation of Sb+‐implanted Si‐Ge alloys;Journal of Applied Physics;1992-10-15
2. Formation and characterization of a PtSi contactedn+pshallow junction;Journal of Applied Physics;1990-09
3. Detection of surface accumulation of dopants in rapid-thermally-annealed, shallow-implant silicon;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1990-01
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