Formation and characterization of a PtSi contactedn+pshallow junction
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.346531
Reference25 articles.
1. Generalized guide for MOSFET miniaturization
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5. Characterization of shallow (Rp<20 nm) As‐ and B‐implanted and electron‐beam annealed silicon
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1. Formation and Characterization of NiSi-Silicided n+p Shallow Junctions;Japanese Journal of Applied Physics;2006-03-08
2. Process and Characteristics of Modified Schottky Barrier (MSB) p-Channel FinFETs;IEEE Transactions on Electron Devices;2005-11
3. Formation of cobalt silicided shallow junction using implant into/through silicide technology and low temperature furnace annealing;IEEE Transactions on Electron Devices;1996
4. Role of fluorine atoms on the thermal stability of the silicide/silicon structure;Journal of Applied Physics;1994-08
5. Formation ofn+pshallow junction by As+implantation through CoSi2film;Journal of Applied Physics;1993-09
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