Formation ofn+pshallow junction by As+implantation through CoSi2film
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.354497
Reference18 articles.
1. Process limitation and device design tradeoffs of self-aligned TiSi/sub 2/ junction formation in submicrometer CMOS devices
2. The Effects of Titanium Silicide Formation on Dopant Redistribution
3. Degradation of doped Si regions contacted with transition‐metal silicides due to metal‐dopant compound formation
4. Comparison between CoSi2 and TiSi2 as dopant source for shallow silicided junction formation
Cited by 11 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Yield enhancement using source/drain BF2+ implant process optimization;2010 IEEE/SEMI Advanced Semiconductor Manufacturing Conference (ASMC);2010-07
2. Epitaxial growth of CoSi2 on Si(001) by reactive deposition epitaxy: Island growth and coalescence;Thin Solid Films;2006-12
3. CoSi2 growth on Si(001) by reactive deposition epitaxy: Effects of high-flux, low-energy ion irradiation;Journal of Applied Physics;2006-07
4. Formation and Characterization of NiSi-Silicided n+p Shallow Junctions;Japanese Journal of Applied Physics;2006-03-08
5. Growth of CoSi2 on Si(001) by reactive deposition epitaxy;Journal of Applied Physics;2005-02-15
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3