Degradation of doped Si regions contacted with transition‐metal silicides due to metal‐dopant compound formation
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.343724
Reference19 articles.
1. Growth of titanium silicide on ion‐implanted silicon
2. Titanium Silicide Formation on Boron‐Implanted Silicon
3. Low-resistance MOS technology using self-aligned refractory silicidation
4. Ion-beam-induced silicidation and its use in very-large-scale integration processing
5. A self-aligned CoSi2interconnection and contact technology for VLSI applications
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1. Metal silicides in advanced complementary metal-oxide-semiconductor (CMOS) technology;Metallic Films for Electronic, Optical and Magnetic Applications;2014
2. Synthesis, Properties, and Applications of One-Dimensional Transition Metal Silicide Nanostructures;Silicon-based Nanomaterials;2013
3. A study of nanoscale TiB2 precipitation during titanium silicidation using atom probe tomography;Thin Solid Films;2011-09
4. Investigation of Boron Redistribution during Silicidation in TiSi[sub 2] using Atom Probe Tomography;AIP Conference Proceedings;2011
5. High-Speed Programming Not-OR Flash Memory Cells With Titanium Disilicide Drain;Japanese Journal of Applied Physics;2008-08-08
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