Ferroelectric gate tunnel field-effect transistors with low-power steep turn-on-Reference-Cited by-同舟云学术

Ferroelectric gate tunnel field-effect transistors with low-power steep turn-on

Published:2014-10 Issue:10 Volume:4 Page:107117
ISSN:2158-3226
Container-title:AIP Advances
language:en
Short-container-title:AIP Advances

Author:

Lee M. H.¹,Wei Y.-T.¹,Lin J.-C.¹,Chen C.-W.²,Tu W.-H.³,Tang M.⁴

Affiliation:

1. Institute of Electro-Optical Science and Technology, National Taiwan Normal University, Taipei, Taiwan

2. Institute of Microelectronics, National Cheng Kung University, Tainan, Taiwan

3. Department of Electrical Engineering and Graduate Institute of Electronics Engineering, National Taiwan University, Taipei, Taiwan

4. Device Design Division, PTEK Technology Co., Ltd, Hsinchu, Taiwan

Funder

National Science Council Taiwan (NSC)

Ministry of Science and Technology, Taiwan (MOST)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://scitation.aip.org/deliver/fulltext/aip/journal/adva/4/10/1.4898150.pdf?itemId=/content/aip/journal/adva/4/10/10.1063/1.4898150&mimeType=pdf&containerItemId=content/aip/journal/adva

Reference17 articles.

1. T. Krishnamohan, D. Kim, T. Viet Dinh, A. Pham, B. Meinerzhagen, C. Jungemann, and K. Saraswat, Tech. Dig., Int. Electron Device Meeting (2008), p. 947.

2. Performance Enhancement of Vertical Tunnel Field-Effect Transistor with SiGe in the δp+Layer

3. Measurement of Enhanced Gate-Controlled Band-to-Band Tunneling in Highly Strained Silicon-Germanium Diodes

4. Driving Current Enhancement of Strained Ge (110) p-Type Tunnel FETs and Anisotropic Effect

5. K. Joen, W.Y. Lop, P. Patel, C. Y. Kang, J. Oh, A. Bowonder, C. Park, C. S. Park, C. Smith, P. Majhi, H.H. Tseng, R. Jammy, T.J. King Liu, and C. Hu, Tech. Dig., VLSI Symp. (2010), p. 121.

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