Effect of Se vapor pressure and thermal dissociation process on excitonic‐emission lines in molecular beam epitaxially grown high‐purity zinc selenide-Reference-Cited by-同舟云学术

Effect of Se vapor pressure and thermal dissociation process on excitonic‐emission lines in molecular beam epitaxially grown high‐purity zinc selenide

Published:1984-11-15 Issue:10 Volume:56 Page:3002-3005
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Taguchi Tsunemasa,Yao Takafumi

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.333775

Reference16 articles.

1. Spectroscopic studies of ZnSe grown by liquid phase epitaxy

2. Donor bound-exciton excited states in zinc selenide

3. Electrical and Photo-luminescence Properties of ZnSe Thin Films Grown by Molecular Beam Epitaxy: Substrate Temperature Effect

4. Electrical and Photo-luminescence Properties of ZnSe Thin Films Grown by Molecular Beam Epitaxy: Substrate Temperature Effect

5. Deep level defects in heteroepitaxial zinc selenide

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