Thermal stability of nitrogen-doped ZnSe grown by molecular beam epitaxy-Reference-Cited by-同舟云学术

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Thermal stability of nitrogen-doped ZnSe grown by molecular beam epitaxy

Published:1995-05 Issue: Volume:150 Page:807-811
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Nishikawa Yukie,Ishikawa Masayuki,J. Parbrook Peter,Onomura Masaaki,Saito Shinji,Hatakoshi Gen-ichi

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference14 articles.

1. Doping of nitrogen acceptors into ZnSe using a radical beam during MBE growth

2. p‐type ZnSe by nitrogen atom beam doping during molecular beam epitaxial growth

3. Blue‐green laser diodes

4. Room temperature continuous operation of blue-green laser diodes

5. Heavily dopedp‐ZnSe:N grown by molecular beam epitaxy

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Lateral index guiding in ZnCdSe quantum well lasers by selective implantation-induced disordering;Applied Physics Letters;1998-09-28

2. Spin-flip Raman scattering studies of post-growth annealed p-type nitrogen-doped zinc selenide;Semiconductor Science and Technology;1997-12-01

3. Compensation in p-type ZnSe based semiconductors;Materials Science and Engineering: B;1997-01

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