Light assisted multilevel resistive switching memory devices based on all-inorganic perovskite quantum dots-Reference-Cited by-同舟云学术

Light assisted multilevel resistive switching memory devices based on all-inorganic perovskite quantum dots

Published:2019-05-06 Issue:18 Volume:114 Page:181103
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Chen Zhiliang¹^ORCID,Zhang Yating¹^ORCID,Yu Yu¹^ORCID,Cao Mingxuan¹,Che Yongli¹,Jin Lufan¹^ORCID,Li Yifan¹^ORCID,Li Qingyan¹,Li Tengteng¹,Dai Haitao²,Yang Junbo³,Yao Jianquan¹

Affiliation:

1. Key Laboratory of Opto-Electronics Information Technology, Ministry of Education, School of Precision Instruments and Opto-Electronics Engineering, Tianjin University, Tianjin 300072, China

2. Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparing Technology, School of Science, Tianjin University, Tianjin 300072, China

3. Center of Material Science, National University of Defense Technology, Changsha 410073, China

Funder

National Key Research and Development Program of China

NSFC | National Natural Science Foundation of China

Wenzhou City Governmental Public Industrial Technology Project

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5087594