Simultaneous determination of ultra-shallow junction depth and abruptness using thermal wave technique
Author:
Publisher
AIP Publishing
Subject
Instrumentation
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1755445
Reference14 articles.
1. Ion implant monitoring with thermal wave technology
2. Spatially resolved defect mapping in semiconductors using laser‐modulated thermoreflectance
3. Detection of thermal waves through optical reflectance
4. Formation of ultrashallowp+‐njunctions by low‐energy boron implantation using a modified ion implanter
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