Formation of ultrashallowp+‐njunctions by low‐energy boron implantation using a modified ion implanter
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.100470
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1. Very-shallow low-resistivity p+-n junctions for CMOS technology
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3. Investigation of Boron Diffusion from Polycrystalline Silicon
4. SOLID-II: High-voltage high-gain kilo-Ångstrom-channel-length CMOSFET's using Silicide with self-aligned ultrashallow (3S) junction
5. Fabrication of submicrometer MOSFET's using gas immersion laser doping (GILD)
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