Direct observation of the structure of defect centers involved in the negative bias temperature instability
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2131197
Reference28 articles.
1. Negative bias temperature instability: Road to cross in deep submicron silicon semiconductor manufacturing
2. A comprehensive model of PMOS NBTI degradation
3. Characteristics of the Surface-State Charge (Qss) of Thermally Oxidized Silicon
4. Negative bias stress of MOS devices at high electric fields and degradation of MNOS devices
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