Simulation of 1/f charge noise affecting a quantum dot in a Si/SiGe structure

Author:

Kȩpa M.1ORCID,Focke N.2ORCID,Cywiński Ł.1ORCID,Krzywda J. A.13ORCID

Affiliation:

1. Institute of Physics, Polish Academy of Sciences 1 , al. Lotników 32/46, PL 02-668 Warsaw, Poland

2. JARA-FIT Institute for Quantum Information, Forschungszentrum Jülich GmbH and RWTH Aachen University 2 , Aachen, Germany

3. Lorentz Institute and Leiden Institute of Advanced Computer Science, Leiden University 3 , P.O. Box 9506, 2300 RA Leiden, The Netherlands

Abstract

Due to presence of magnetic field gradient needed for coherent spin control, dephasing of single-electron spin qubits in silicon quantum dots is often dominated by 1/f charge noise. We investigate theoretically fluctuations of ground state energy of an electron in gated quantum dot in a realistic Si/SiGe structure. We assume that the charge noise is caused by motion of charges trapped at the semiconductor–oxide interface. We consider a realistic range of trapped charge densities, ρ ∼1010 cm−2, and typical lenghtscales of isotropically distributed displacements of these charges, δr≤ 1 nm, and identify pairs (ρ,δr) for which the amplitude and shape of the noise spectrum are in good agreement with spectra reconstructed in recent experiments on similar structures.

Funder

This research was funded in whole by National Science Agency, Poland

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

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