Degradation mechanisms in GaN light-emitting diodes undergoing reverse-bias operations in water vapor
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4826254
Reference15 articles.
1. Origin of forward leakage current in GaN-based light-emitting devices
2. Solid-state lighting: failure analysis of white LEDs
3. Leakage current and reverse-bias luminescence in InGaN-based light-emitting diodes
4. Hot carrier-induced emission from the InGaN/GaN light-emitting diode by characterizing reverse-bias electroluminescence
5. Optical characterizations and reverse-bias electroluminescence observation for reliability investigations of the InGaN light emitting diode
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