The strain relaxation of In0.1Ga0.9As on GaAs (110) grown by molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.360529
Reference6 articles.
1. Growth of GexSi1−xalloys on Si(110) surfaces
2. The relief of pseudomorphic strain in epilayers of f.c.c. structures grown in (110) orientation
3. Surface morphology of molecular-beam epitaxially grown Si1−xGex layers on (100) and (110) Si
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4. (Invited) Heteroepitaxial Growth of Sn-Related Group-IV Materials on Si Platform for Microelectronic and Optoelectronic Applications: Challenges and Opportunities;ECS Transactions;2013-08-31
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