Planar guarded avalanche diodes in InP fabricated by ion implantation
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.90937
Reference10 articles.
1. GaInAsP/InP avalanche photodiodes
2. Impact ionisation ratio in In0.73Ga0.27As0.57P0.43
3. InGaAsP/InP Avalanche Photodiode
4. Ion‐implanted InGaAsP avalanche photodiode
5. p‐njunction diodes in InP and In1−xGaxAsyP1−yfabricated by beryllium‐ion implantation
Cited by 19 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. DC characterization of fully ion-implanted p-n junctions into semi-insulating InP;IEEE Transactions on Electron Devices;1996-03
2. Fully ion‐implantedp‐njunctions in InP;Journal of Applied Physics;1990-04
3. Iii–V Semiconductor Devices;Materials Processing: Theory and Practices;1989
4. Ion Implantation in Iii–V Semiconductors;Materials Processing: Theory and Practices;1989
5. Responsivity of ion-implanted p-n junction in a GaAs electroabsorption avalanche detector;IEEE Transactions on Electron Devices;1986-06
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