Author:
Martin J.M.,Sanchez S.G.,Martil I.,Gonzalez-Diaz G.
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Cited by
3 articles.
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1. Electrical characterization of Si+ and Si+/P+ implanted N+PIn0.53Ga0.47As junctions;Journal of Materials Science: Materials in Electronics;1999
2. Shallow junctions in p-In.53Ga.47As by ion implantation;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1999-01
3. Effect of capping layers on activation of Be/As-implanted semi-insulating InP:Fe;Applied Physics Letters;1997-07-21