Schottky barrier height variation due to a Mo interfacial layer in W/GaAs systems-Reference-Cited by-同舟云学术

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Schottky barrier height variation due to a Mo interfacial layer in W/GaAs systems

Published:1989-06 Issue:11 Volume:65 Page:4324-4332
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Ohfuji Shin‐ichi,Kuriyama Youichi

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.343292

Reference18 articles.

1. Interface chemistry and electrical properties of tungsten Schottky‐barrier contacts to GaAs

2. Schottky barrier degradation of the W/GaAs system after high‐temperature annealing

3. High-temperature stable W/GaAs interface and application to metal–semiconductor field-effect transistors and digital circuits

4. Thermal and chemical stability of Schottky metallization on GaAs

5. Solid-phase reactions between (100) GaAs and thin-film refractory metals (Ti, Zr, V, Nb, Cr, Mo, and W)

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Discussion;Solid-State Electronics;1998-01

2. Metal/semiconductor interfacial reactions;Metallurgical Transactions A;1992-07

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