Low energy electron beam induced vacancy activation in GaN
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3696047
Reference20 articles.
1. Superior radiation resistance of In1−xGaxN alloys: Full-solar-spectrum photovoltaic material system
2. Defect Donor and Acceptor in GaN
3. Introduction and recovery of Ga and N sublattice defects in electron-irradiated GaN
4. Cathodoluminescence of epitaxial GaN laterally overgrown on (0001) sapphire substrate. Time evolution with low energy electron beam
5. Effect of e‐beam irradiation on ap‐njunction GaN light emitting diode
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