Cathodoluminescence of epitaxial GaN laterally overgrown on (0001) sapphire substrate. Time evolution with low energy electron beam
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1373703
Reference21 articles.
1. Reversible ultraviolet-induced photoluminescence degradation and enhancement in GaN films
2. Effect of laser irradiation on the luminescence of Mg and Si-doped GaN films
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4. Luminescence from growth topographic features in GaN:Si films
5. Characteristic of InGaN/GaN Laser Diode Grown by a Multi-Wafer MOCVD System
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