Modeling of amorphous InGaZnO thin-film transistors based on the density of states extracted from the optical response of capacitance-voltage characteristics-Reference-Cited by-同舟云学术

Modeling of amorphous InGaZnO thin-film transistors based on the density of states extracted from the optical response of capacitance-voltage characteristics

Published:2008-11-03 Issue:18 Volume:93 Page:182102
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Jeon Kichan,Kim Changjung,Song Ihun,Park Jaechul,Kim Sunil,Kim Sangwook,Park Youngsoo,Park Jun-Hyun,Lee Sangwon,Kim Dong Myong,Kim Dae Hwan

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3013842

Reference11 articles.

1. Effects of oxygen gas pressure on structural, electrical, and thermoelectric properties of (ZnO)3In2O3 thin films deposited by rf magnetron sputtering

2. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

3. High mobility amorphous/nanocrystalline indium zinc oxide deposited at room temperature

4. Transparent, high mobility InGaZnO thin films deposited by PLD

5. Modeling of amorphous InGaZnO4 thin film transistors and their subgap density of states

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