Study on Zr-silicate interfacial layer of ZrO2 metal-insulator-semiconductor structure
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1454231
Reference3 articles.
1. Structure and stability of ultrathin zirconium oxide layers on Si(001)
2. Improvement of Memory Characteristics of Metal-Ferroelectrics/Insulating Buffer Layer/ Semiconductor Structures by Combination of Pulsed Laser Deposited SrBi2Ta2O9Films and Ultra-Thin SiN Buffer Layers
3. MOS capacitance measurements for high-leakage thin dielectrics
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1. Analysis of Structural, Optical, and Aquaphobic Properties of Zirconium Oxide Nanofilms by Varying Sputtering Gas;Advances in Materials Science and Engineering;2022-01-30
2. Impact of Zr content on multiphase zirconium–tungsten oxide (Zr–WOx) films and its MIS structure of Cu/Zr–WOx/p-Si Schottky barrier diodes;Journal of Materials Science: Materials in Electronics;2017-11-21
3. Electrical properties of atomic layer deposited HfO2/Al2O3 multilayer on diamond;Diamond and Related Materials;2015-04
4. Low on-resistance diamond field effect transistor with high-k ZrO2 as dielectric;Scientific Reports;2014-09-22
5. Size-effects on the optical properties of zirconium oxide thin films;Applied Physics Letters;2009-12-07
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