Improvement of Memory Characteristics of Metal-Ferroelectrics/Insulating Buffer Layer/ Semiconductor Structures by Combination of Pulsed Laser Deposited SrBi2Ta2O9Films and Ultra-Thin SiN Buffer Layers-Reference-Cited by-同舟云学术

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Improvement of Memory Characteristics of Metal-Ferroelectrics/Insulating Buffer Layer/ Semiconductor Structures by Combination of Pulsed Laser Deposited SrBi2Ta2O9Films and Ultra-Thin SiN Buffer Layers

Published:2000-04-30 Issue:Part 1, No. 4B Volume:39 Page:2058-2062
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Yamaguchi Takeshi,Koyama Masato,Takashima Akira,Takagi Shin-ichi

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 21 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Ferroelectric Field Effect Transistors Based on PZT and IGZO;IEEE Journal of the Electron Devices Society;2019

2. Electrical characterization of the metal ferroelectric oxide semiconductor and metal ferroelectric nitride semiconductor gate stacks for ferroelectric field effect transistors;Applied Physics Letters;2014-03-03

3. Electrical characterization of MFeOS gate stacks for ferroelectric FETs;Materials Science in Semiconductor Processing;2013-12

4. Fabrication and Characterization of MFIS-FET Using Au/BLT/LZO/Si Structures;Ferroelectrics;2008-10-21

5. Structural and Electrical Properties of Ferroelectric-Gate Field-Effect-Transistors Using Au/(Bi,La)4Ti3O12/SrTa2O6/Si Structures;2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics;2007-05

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