Surface studies of hydrogen etched 3C-SiC(001) on Si(001)
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2768870
Reference14 articles.
1. Epitaxially ideal oxide–semiconductor interfaces: Silicate adlayers on hexagonal (0001) and (0001̄) SiC surfaces
2. Passivation of hexagonal SiC surfaces by hydrogen termination
3. Structure and Morphology of 4H-SiC Wafer Surfaces after H2-Etching
4. SiC pore surfaces: Surface studies of 4H–SiC(11¯02) and 4H–SiC(1¯102¯)
5. High growth rates (>30μm/h) of 4H–SiC epitaxial layers using a horizontal hot-wall CVD reactor
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