SiC pore surfaces: Surface studies of 4H–SiC(11¯02) and 4H–SiC(1¯102¯)
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2166484
Reference4 articles.
1. A Short Synopsis of the Current Status of Porous SiC and GaN
2. Atomic Structure of SiC Surfaces
3. High growth rates (>30μm/h) of 4H–SiC epitaxial layers using a horizontal hot-wall CVD reactor
4. Epitaxially ideal oxide–semiconductor interfaces: Silicate adlayers on hexagonal (0001) and (0001̄) SiC surfaces
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2. Curious Relationship between Orientation of SiC Substrates and Chemical Reactivity;Materials Science Forum;2012-05
3. Non-Basal Plane SiC Surfaces: Anisotropic Structures and Low-Dimensional Electron Systems;Silicon Carbide;2011-03-28
4. Non-basal plane SiC surfaces: Anisotropic structures and low-dimensional electron systems;physica status solidi (b);2009-06-17
5. First-principles investigation of the atomic and electronic structure of the4H-SiC(11¯02)−c(2×2)surface;Physical Review B;2008-12-24
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