Mass spectrometric study of the reaction of photo‐oxidized GaAs with Ga
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.356008
Reference15 articles.
1. Selective Area Epitaxy of GaAs Using GaAs Oxide as a Mask
2. In-situ selective-area epitaxy of a GaAs-based heterostructure using a GaAs oxide layer as a mask
3. Patterning of GaAs by in situ electron beam lithography toward nanometer-scale structures
4. New damage-free patterning method of a GaAs oxide mask and GaAs selective growth using the metalorganic molecular beam epitaxy method
5. The oxidation of GaAs(110): A reevaluation
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1. A gas phase analysis technique applied to in-situ studies of gas–solid interactions;Journal of Materials Science;2007-01-20
2. Selective area chemical beam epitaxy of GaAs using Ga2O3 as a mask layer;Journal of Crystal Growth;1996-11
3. Reduction of carbon incorporation in the in-situ selective-area epitaxy of GaAs by metalorganic molecular beam epitaxy using tris-dimethylaminoarsine;Journal of Crystal Growth;1995-05
4. In Situ Mass Spectrometric Analysis of Surface Chemistry in MOMBE Growth;Japanese Journal of Applied Physics;1995-02-28
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