Reduction of carbon incorporation in the in-situ selective-area epitaxy of GaAs by metalorganic molecular beam epitaxy using tris-dimethylaminoarsine
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference14 articles.
1. Selective Area Epitaxy of GaAs Using GaAs Oxide as a Mask
2. In-situ selective-area epitaxy of a GaAs-based heterostructure using a GaAs oxide layer as a mask
3. New damage-free patterning method of a GaAs oxide mask and GaAs selective growth using the metalorganic molecular beam epitaxy method
4. Proc. 19th Intern. Symp. on GaAs and Related Compounds;Yoshida,1993
Cited by 10 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Selective area epitaxy of GaAs using tri-isopropylgallium;Journal of Electronic Materials;1998-05
2. Improving the etched/regrown GaAs interface by in-situ etching using tris-dimethylaminoarsenic;Journal of Crystal Growth;1997-05
3. Surface crystal-structure of a GaN film as an in situ mask using MOMBE;Journal of Crystal Growth;1997-05
4. The effect of EB irradiation with and without hot-jet Cl2 on an ultra-thin GaN layer for selective etching;Applied Surface Science;1996-07
5. In situ selective area growth of GaAs, AlAs, and AlGaAs using MOMBE;Journal of Crystal Growth;1996-07
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