Ion beam synthesis of ternary phase CoFe‐silicide in (111) silicon
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.114967
Reference10 articles.
Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Ternary CoxFe(1−x)Si2 and NixFe(1−x)Si2 formed by ion implantation in silicon;Journal of Applied Physics;2002-10
2. Evidence of a ternary Co1−xFexSi2 phase with a CaF2-type structure: High-resolution transmission electron microscopy and diffraction anomalous fine structure study;Applied Physics Letters;2002-09-23
3. Structural and optical properties of Fe1−xMxSi2 thin films (M=Co, Mn; 0≤x≤0.20);Microelectronic Engineering;2001-03
4. Influence of the addition of Co and Ni on the formation of epitaxial semiconducting β-FeSi2: Comparison of different evaporation methods;Journal of Applied Physics;1998-04-15
5. Synthesis of epitaxial ternaryCo1−xFexSi2silicides with CsCl- andCaF2-type cubic structures on Si(111) by codeposition techniques;Physical Review B;1997-05-15
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