Trapped‐hole annealing and electron trapping in metal‐oxide‐semiconductor devices
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.107126
Reference25 articles.
1. Radiation‐induced charge neutralization and interface‐trap buildup in metal‐oxide‐semiconductor devices
2. Modeling the anneal of radiation-induced trapped holes in a varying thermal environment
3. Physical Mechanisms Contributing to Device "Rebound"
4. Spatial Dependence of Trapped Holes Determined from Tunneling Analysis and Measured Annealing
5. Electron Injection Studies of Radiation Induced Positive Charge in MOS Devices
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