Study of Hole Traps in the Oxide-Nitride-Oxide Structure of the SONOS Flash Memory-Reference-Cited by-同舟云学术

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Study of Hole Traps in the Oxide-Nitride-Oxide Structure of the SONOS Flash Memory

Published:2008-12-15 Issue:6 Volume:53 Page:3302-3306
ISSN:0374-4884
Container-title:Journal of the Korean Physical Society
language:en
Short-container-title:J. Korean Phy. Soc.

Author:

Seo Yu Jeong,Kim Kyoung Chan,Kim Hee Dong,Kim Tae Geun,An Ho-Myoung

Publisher

Korean Physical Society

Subject

General Physics and Astronomy

Cited by 15 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Perhydropolysilazane Charge‐Trap Layer in Solution‐Processed Organic and Oxide Memory Thin‐Film Transistors;Advanced Electronic Materials;2022-01-14

2. Self-rectifying resistive switching characteristics of Ti/Zr3N2/p-Si capacitor for array applications;Ceramics International;2021-08

3. Reliability Aspects of SONOS Based Analog Memory for Neuromorphic Computing;2020 IEEE International Reliability Physics Symposium (IRPS);2020-04

4. The influence of Ti doping and annealing on Ce2Ti2O7 flash memory devices;Applied Surface Science;2017-02

5. Relaxation of the electric current in Si3N4: Experiment and numerical simulation;Physics of the Solid State;2017-01

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